连续激光与单脉冲纳秒激光对CMOS的损伤效应
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王昂, 郭锋, 朱志武, 等. 连续激光与单脉冲纳秒激光对CMOS的损伤效应[J]. 强激光与粒子束, 2014, 26: 091007. doi: 10.11884/HPLPB201426.091007
引用本文:
王昂, 郭锋, 朱志武, 等. 连续激光与单脉冲纳秒激光对CMOS的损伤效应[J]. 强激光与粒子束, 2014, 26: 091007. doi: 10.11884/HPLPB201426.091007
Wang Ang, Guo Feng, Zhu Zhiwu, et al. Comparative study of hard CMOS damage irradiatedby CW laser and single-pulse ns laser[J]. High Power Laser and Particle Beams, 2014, 26: 091007. doi: 10.11884/HPLPB201426.091007
Citation:
Wang Ang, Guo Feng, Zhu Zhiwu, et al. Comparative study of hard CMOS damage irradiatedby CW laser and single-pulse ns laser[J]. High Power Laser and Particle Beams, 2014, 26: 091007. doi: 10.11884/HPLPB201426.091007
王昂, 郭锋, 朱志武, 等. 连续激光与单脉冲纳秒激光对CMOS的损伤效应[J]. 强激光与粒子束, 2014, 26: 091007. doi: 10.11884/HPLPB201426.091007
引用本文:
王昂, 郭锋, 朱志武, 等. 连续激光与单脉冲纳秒激光对CMOS的损伤效应[J]. 强激光与粒子束, 2014, 26: 091007. doi: 10.11884/HPLPB201426.091007
Wang Ang, Guo Feng, Zhu Zhiwu, et al. Comparative study of hard CMOS damage irradiatedby CW laser and single-pulse ns laser[J]. High Power Laser and Particle Beams, 2014, 26: 091007. doi: 10.11884/HPLPB201426.091007
Citation:
Wang Ang, Guo Feng, Zhu Zhiwu, et al. Comparative study of hard CMOS damage irradiatedby CW laser and single-pulse ns laser[J]. High Power Laser and Particle Beams, 2014, 26: 091007. doi: 10.11884/HPLPB201426.091007
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连续激光与单脉冲纳秒激光对CMOS的损伤效应
doi: 10.11884/HPLPB201426.091007
王昂,
郭锋,
朱志武,
许中杰,
程湘爱,
1.
国防科学技术大学 光电科学与工程学院, 长沙 41 0073
详细信息
通讯作者:
程湘爱
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文章访问数:
1986
HTML全文浏览量:
384
PDF下载量:
601
被引次数: 0
出版历程
收稿日期:
2014-02-12
修回日期:
2014-04-21
刊出日期:
2014-08-18
Comparative study of hard CMOS damage irradiatedby CW laser and single-pulse ns laser
Wang Ang,
Guo Feng,
Zhu Zhiwu,
Xu Zhongjie,
Cheng Xiang’ai,
1.
School of Opto Electronic Science and Engineering,National University of Defense Technology,Changsha 410073,China
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摘要
摘要:
针对前照式有源型可见光互补金属氧化物半导体（CMOS）器件,开展了1080 nm连续激光与1064 nm单脉冲ns激光损伤效应的对比研究,观察到了CMOS出现点损伤、半边黑线损伤与十字交叉黑线损伤三个典型的硬损伤阶段,并分析了损伤机理。在连续激光辐照下,损伤效应主要是热效应的影响。当辐照时间小于稳态时间时,辐照时间越长,损伤阈值越低,当辐照时间大于稳态时间时,损伤阈值趋于稳定值。对损伤后的CMOS器件的微观结构进行了显微观察,结合CMOS电路结构深入分析了各种典型实验现象的损伤机理,半边黑线损伤与十字交叉黑线损伤主要是不同层金属线路熔断导致信号断路。在单脉冲ns激光作用下, CMOS像元表面的硬损伤主要是激光加热作用和等离子体冲击波作用引起的。
关键词:
前照式互补金属氧化物半导体 /
单脉冲 /
热效应 /
辐照时间 /
稳态时间
Abstract:
In order to study the phenomenon and the mechanism of the hard damaged regional expansion of complementary metal oxide semiconductor(CMOS), a 1080 nm continuous wave(CW) laser and a 1064 nm single-pulse ns laser are used to irradiated the front illuminated CMOS, which has a three-stage of hard damage: point damage, half black line damage and black lines cross damage. When irradiated by CW laser, the thermal effects lead to damage. When the duration time is shorter than the thermal balance time, longer duration time leads to lower threshold and the threshold would be a constant when the duration time is longer than the thermal balance time. Observing the micro-structure of damaged CMOS detector and combining the electric structure and working principle of CMOS, we conclude that the half black line damage and black lines cross damage of CMOS irradiated by CW laser are signal short leading by fused metal lines of different layer. But the mechanism of single-pulse laser is different which is mainly induced by thermal effects and plasma impulse wave.
Key words:
front illuminated complementary metal oxide semiconductor /
single pulse laser /
thermal effect /
duration time /
thermal balance time
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计量
文章访问数:
1986
HTML全文浏览量:
384
PDF下载量:
601
被引次数: 0
出版历程
收稿日期:
2014-02-12
修回日期:
2014-04-21
刊出日期:
2014-08-18
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